Optical effect in normally-off GaAs MESFET-Reference-Cited by-同舟云学术

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Optical effect in normally-off GaAs MESFET

Published:1985-03-16 Issue:1 Volume:88 Page:K99-K103
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Gulati R.,Kaushik S. B.,Trivedi P. L.,Sharma H. S.,Chandra I.,Sharma B. L.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. GaAs m.e.s.f.e.t.: a high-speed optical detector

2. and , Proc. Internat. Elect. Dev. Meeting, Washington (D.C.) 1978, Elect. Dev. Soc. of IEEE (p. 120).

3. Light-induced effects in GaAs f.e.t.s

4. High Speed Photoresponse Mechanism of a GaAs-MESFET

5. Switching characteristics of logic gates addressed by picosecond light pulses

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Variable Pinch-Off GaAs MESFET;physica status solidi (a);1985-10-16

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