Shallow diffusions of zinc in GaAs at 700 °C-Reference-Cited by-同舟云学术

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Shallow diffusions of zinc in GaAs at 700 °C

Published:1981-06-16 Issue:2 Volume:65 Page:643-647
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Tuck B.,Houghton A. J. N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Zn Diffusion in GaAs under Constant As Pressure

2. Introduction to Diffusion in Semiconductors, Peter Peregrinus, Stevenage 1974.

3. Measurement of Sheet Resistivities with the Four-Point Probe

4. Electrical profiles from zinc implanted GaAs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs doping by rapid thermal diffusion of a laser-deposited elemental Zn source film: Shallow and laterally graded diffusions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-01

2. The effect of As on Zn diffusion-induced disordering of AlAs/GaAs superlattices;Semiconductor Science and Technology;1990-06-01

3. Modelling of the generation of Ga interstitials during the diffusion of Zn into GaAs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;1990-06

4. Zn diffusion-induced disorder in AlAs/GaAs superlattices;Semiconductor Science and Technology;1989-10-01

5. Shallow zinc diffusion in liquid phase epitaxial GaAs and (GaAl)As at 600 °C;Applied Physics Letters;1983-01

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