Depth Profile Measurements of Ions Implanted in Semiconductor Materials by Particle Induced Photon Emission-Reference-Cited by-同舟云学术

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Depth Profile Measurements of Ions Implanted in Semiconductor Materials by Particle Induced Photon Emission

Published:1989-04-16 Issue:2 Volume:112 Page:799-804
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Kuduk R.,Kulik M.,Maczka D.,Pyszniak K.,Żuk J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. The collection of ions implanted in semiconductors. II. range distributions derived from collection and sputter-etch curves

2. Ion beam sputtering - the effect of incident ion energy on atomic mixing in subsurface layers

3. AES analysis of sodium in a corroded bioglass using a low‐temperature technique

4. , and , Ion Implantation, Sputtering, and their Applications, Academic Press, 1976.

5. Concentration profiles and sputtering yields measured by optical radiation of sputtered particles

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ionoluminescence;Luminescence of Solids;1998

2. Continuum optical radiation produced by Ar+ and Kr+ bombardment of semiconductor and metal targets;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03

3. Ionoluminescence of porous silicon;Journal of Luminescence;1993-11

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