Emitter dip effect in double-diffused n–p–n silicon transistors-Reference-Cited by-同舟云学术

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Emitter dip effect in double-diffused n–p–n silicon transistors

Published:1973-03-16 Issue:1 Volume:16 Page:273-278
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Maeda M.,Tanimoto M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. in: Properties of Elemental and Compound Semiconductors, Ed. Interscience Publishers, 1960 (p. 321).

2. Solubility of Lithium in Doped and Undoped Silicon, Evidence for Compound Formation

3. Non-metallic solids. Vacancy enhanced diffusion in silicon. Effects of irradiation and of chemical impurities

4. The Cooperative Diffusion Effect

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5. Penetration Depth of Diffusion-Induced Dislocations;Japanese Journal of Applied Physics;1983-07-20

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