On the effect of doping impurities on the formation of rod-like defects in silicon-Reference-Cited by-同舟云学术

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On the effect of doping impurities on the formation of rod-like defects in silicon

Published:1984-11-16 Issue:1 Volume:86 Page:185-190
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Kalinin V. V.,Gerasimenko N. N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Radiation‐Induced Precipitation in Silicon During High‐Voltage Electron Microscope Observation

2. The dynamic observation of the formation of defects in silicon under electron and proton irradiation

3. Identification of interstitial‐ and vacancy‐type dislocation loops in ion‐implanted silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extended Defects from Ion Implantation and Annealing;Rapid Thermal Processing;1993

2. A systematic analysis of defects in ion-implanted silicon;Applied Physics A Solids and Surfaces;1988-01

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