The effect of rapid thermal annealing on the electrical characteristics of InP MOS structures with a double oxide layer-Reference-Cited by-同舟云学术

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The effect of rapid thermal annealing on the electrical characteristics of InP MOS structures with a double oxide layer

Published:1995-12-16 Issue:2 Volume:152 Page:573-578
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Eftekhari G.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. in: Physics and Chemistry of III-V Compound Semiconductor Interfaces, Ed. Plenum Press, New York 1985 ( pp. 213 to 281).

2. Effects of interface traps on the transconductance and drain current of InP MISFET's

3. InP MIS Diodes Prepared by Anodic Oxidation

4. InP high mobility enhancement MISFETs using anodically grown double-layer gate insulator

5. , , , and , in: Dielectric Layers in Semiconductors, Ed. E-MRS, Strasbourg 1986 (p 361).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on DC/RF Performance of LG = 19 nm Heterogeneous Integrated Ga0.15In0.85As/InAs/Ga0.15In0.85As Composite Channel InP HEMT on Silicon Substrate for Future Beyond 5G and Quantum Computing Applications;Silicon;2022-02-03

2. Effect of Fixed Charges at Interface Between InP and Bonding Layer on Heterogeneous Integration of InP HEMTs;IEEE Transactions on Electron Devices;2021-05

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