A new interpretation of the photodoping effect in amorphous As- and Ge-chalcogenides-Reference-Cited by-同舟云学术

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A new interpretation of the photodoping effect in amorphous As- and Ge-chalcogenides

Published:1987-05-16 Issue:1 Volume:101 Page:105-114
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Kluge G.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. and (Ed.), Proc. Symp. Inorganic Resist. Systems, Electrochem. Soc. 1982.

2. A novel inorganic photoresist utilizing Ag photodoping in Se‐Ge glass films

3. States in the Gap in Glassy Semiconductors

4. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors

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