On the Temperature Dependence of the Intrinsic Concentration in Semi-Insulating InP Determined from Galvanomagnetic Measurements
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Herstellung und elektrische Eigenschaften von InP und GaAs
2. Über die elektrischen Eigenschaften von Mischkristallen der Form In(Asy P1-y)
3. Determination of the electrical properties of semi‐insulating GaAs: A role of the magnetic field dependences of single‐carrier parameters
4. Analysis of galvanomagnetic parameters in semi-insulating GaAs with respect to the three-band model
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1. The Local Exploration of Magnetic Field Effects in Semiconductors;Crystals;2022-04-16
2. Conductivity, Hall and magnetoresistance effect measurements on SI GaAs and InP;physica status solidi (a);2004-05
3. Evaluation of semi-insulating Ti-doped and Mn-doped InP for radiation detection;Semiconductor Science and Technology;2001-11-13
4. Indication of Mixed Conductivity in III-V Semiconductors Using Conductivity, Hall Effect and Magnetoresistance Measurements;physica status solidi (a);2000-09
5. Temperature change of the conductivity type in semi-insulating InP double doped with Zn and Fe;Semiconductor Science and Technology;2000-03-01
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