Photoluminescence of silicon annealed at low temperatures (420 to 550 °C)-Reference-Cited by-同舟云学术

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Photoluminescence of silicon annealed at low temperatures (420 to 550 °C)

Published:1985-01-16 Issue:1 Volume:87 Page:K45-K48
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Drozdov N. A.,Zyatkova N. I.,Patrin A. A.,Tkachev V. D.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Heat‐Treatment Studies of Oxygen‐Defect‐Impurity Interactions in Silicon

2. Self-interstitials and thermal donor formation in silicon: new measurements and a model for the defects

3. Investigation of formation conditions of thermal donors-I and -II in oxygen-containing n-type silicon within the temperature range 400 to 800°C

4. Thermally-induced defects in silicon containing oxygen and carbon

5. Photoliminescence Analysis of `New Donors' in Silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon, microdefects: oxygen-related microdefects;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements

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