DLTS studies of low-t emperature annealing in lithium-d oped silicon-Reference-Cited by-同舟云学术

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DLTS studies of low-t emperature annealing in lithium-d oped silicon

Published:1992-03-16 Issue:1 Volume:130 Page:53-60
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Brilliantov N. V.,Rudenko A. I.,Shcherbakov Yu. V.,Zverev V. V.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Electron induced degradation and recovery under space conditions of lithium-doped silicon solar cells

2. Radiation defects in n-silicon doped with lithium and sodium

3. Electron irradiation-induced defects in lithium doped n-type silicon with different oxygen concentrations

4. Anomalous Low Temperature Annealing of Electron Irradiated Lithium-Doped Silicon Solar Cells

5. Damage and Recovery Characteristics of Lithium-Containing Solar Cells

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lithium–gold‐related defect complexes inn‐type crystalline silicon;Journal of Applied Physics;1995-04

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