Leakage current study of a high-low junction with variation of injection level-Reference-Cited by-同舟云学术

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Leakage current study of a high-low junction with variation of injection level

Published:1993-09-16 Issue:1 Volume:139 Page:K29-K33
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

De S. S.,Ghosh A. K.,Haldar J. C.,Hajra A. K.,Bera M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. An analytical model for the low- emitter-impurity-concentration transistor

2. Current gain of high-low junction emitter bipolar transistor structure with uniformly doped profiles

3. Merged-transistor logic (MTL)-a low-cost bipolar logic concept

4. I/sup 2/L with a self-aligned double-diffused injector

5. Performance limitations of silicon solar cells

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of surface recombination on the transit-time in heavily doped n+-p junction silicon solar cell;Solid-State Electronics;1995-06

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