Stoichiometric annealing and electrical properties of Hg0.8Cd0.2Te grown by solid state recrystallization-Reference-Cited by-同舟云学术

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Stoichiometric annealing and electrical properties of Hg0.8Cd0.2Te grown by solid state recrystallization

Published:1989-09-16 Issue:1 Volume:115 Page:135-142
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Sharma R. K.,Mehta S. K.,Singh V. K.,Prasad G.,Sharma B. B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. in: Semiconductors and Semimetals, Vol. 18, Ed. and , Academic Press, New York 1981 (p. 47).

2. Factors affecting the electrical characteristics of cadmium mercury telluride crystals

3. Precipitation of tellurium in (Hg, Cd)Te alloys

4. The effect of low temperature annealing on defects, impurities, and electrical properties of (Hg,Cd)Te

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermophysical properties of liquid Te: Density, electrical conductivity, and viscosity;Journal of Applied Physics;2005-04-15

2. Horizontal casting for the growth of Hg1−xCdxTe by solid state recrystallization;Journal of Crystal Growth;1993-08

3. Native point defects in Te-rich p-type Hg1-xCdxTe;Semiconductor Science and Technology;1993-02-01

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