Plasma Anodization of Silicon Nitride-Reference-Cited by-同舟云学术

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Plasma Anodization of Silicon Nitride

Published:1990-10-16 Issue:2 Volume:121 Page:K181-K183
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Parkhutik V. P.,Makushok Yu. E.,Borisov S. Yu.,Yakovlev D. V.,Martinez-Duart J. M.,Albella J. M.,Climent A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Properties of Anodic Oxide Films Formed in the Anodization of Silicon Nitride

2. Characteristics of Plasma‐Oxidized Nitride MOS Structures

3. Conversion of Silicon Nitride Films to Anodic SiO[sub 2]

4. and , Plasma Anodization of Metals and Semiconductors: Physics, Technology, and Applications, Izd. Nauka i Tekhnika, Minsk 1990 (p. 282) (in Russian).

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