Characteristics of Mg-Zn8P2: Cd contacts-Reference-Cited by-同舟云学术

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Characteristics of Mg-Zn8P2: Cd contacts

Published:1988-04-16 Issue:2 Volume:106 Page:551-555
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Szatkowski J.,Sierański K.,Misiewicz J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Proc. Internat. Conf. Phys. Technol. Compensated Semieond., Vol. 1, Madras, Febr. 20 to 22, 1985, World Scientific, Singapore 1985 (p. 97).

2. Direct and indirect optical transitions in Zn3P2

3. Absorption edge ofZn3P2

4. Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy Conversion

5. Minority-carrier diffusion length in Zn3P2

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Universal tight-binding model for II–V semiconducting compounds;Solid State Communications;1992-09

2. II3V2 compounds and alloys;Progress in Crystal Growth and Characterization of Materials;1992-01

3. Electrical Properties of Zn3P2 at Room Temperature;Physica Status Solidi (a);1989-01-16

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