Photoelectrical characteristics of Au/n-CuInS2 schottky diodes

Author:

Kościelniak-Mucha B.,Opanowicz A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. and , Ternary Chalcopyrite Semiconductors, Growth. Electronic Properties and Application, Pergamon Press, New York 1975 (Chap. 4).

2. , and (Ed.), 6th Internat. Conf. Ternary and Multinary Compounds, Caracas, 15–17 August, 1984, in: Progress in Crystal Growth and Characterization, Vol. 10, Pergamon Press, Oxford 1985 (Sec. 5).

3. , , , , , and , Proc. 12th Photovoltaic Specialist Conf., Baton Rouge (Louisiana), IEEE, New York 1976 (p. 543).

4. Minority carriers lifetime measurements in CuInS2 by photoelectromagnetic effect

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Negative-differential-resistance effects in amorphous CuInS2 thin film;Journal of Materials Science: Materials in Electronics;1999

2. Electrical and Photoelectrical Properties ofn-CuInS2 Single Crystals;Crystal Research and Technology;1997

3. Copper indium sulfide (roquesite, CuInS2) transport properties, photoconductivity;Landolt-Börnstein - Group III Condensed Matter

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