Fundamental optical absorption edge and compositional disorder in γ1-(GaxIn1−x)2Se3 single crystals-Reference-Cited by-同舟云学术

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Fundamental optical absorption edge and compositional disorder in γ1-(GaxIn1−x)2Se3 single crystals

Published:1994-07-16 Issue:1 Volume:144 Page:223-233
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Kranjčec M.,Desnica D. I.,Čelustka B.,Kovacs Gy. Sh.,Studenyak I. P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids

2. Urbach rule

3. Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon

4. Band-gap fluctuations in amorphous semiconductors

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1. Materials for Optical Sensors of X-ray Irradiation Based on (GaxIn1 – x)2Se3 Films;Ukrainian Journal of Physics;2022-12-21

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3. Optical Parameters of As-Deposited and Annealed (Ga0.3In0.7)2Se3 Thin Films;Ukrainian Journal of Physics;2021-11-01

4. Van der Waals layered ferroelectric CuInP2S6: Physical properties and device applications;Frontiers of Physics;2020-09-30

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