Piezoelectrically Induced Charge Distributions around Dislocations in CdTe and HgCdTe-Reference-Cited by-同舟云学术

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Piezoelectrically Induced Charge Distributions around Dislocations in CdTe and HgCdTe

Published:1984-09-16 Issue:1 Volume:85 Page:243-248
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Booyens H.,Basson J. H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Liquid phase epitaxial growth of CdTe/Hg1−xCdxTe multilayers (0.3

2. Undoped high‐resistivity cadmium telluride for nuclear radiation detectors

3. Growth of High Purity CdTe Single Crystals by Vertical Zone Melting

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Piezoelectric effects in HgCdTe devices;Journal of Electronic Materials;1995-09

2. How dislocations affect transport;Journal of Electronic Materials;1995-05

3. Electrical effects of dislocations and other crystallographic defects in Hg0.78Cd0.22Te n-on-p photodiodes;Journal of Electronic Materials;1993-08

4. Energy and energy-factor or infinite straight charged-dislocations in an anisotropic piezoelectric crystal;International Journal of Engineering Science;1992-10

5. On the time delay of the photoplastic effect;Journal of Materials Research;1986-02

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