The Conduction Mechanism of Semi-Insulating Polycrystalline Silicon Films
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Highly reliable high-voltage transistors by use of the SIPOS process
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4. A Model for the Variations in the Field-Dependent Behaviour of the Poole-Frenkel Effect
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1. Nonlinear electrical transport in nc-Si/CaF2 multilayer structures with ultrathin CaF2 layers;Journal of Applied Physics;2001-01
2. Electrical and structural properties of rapid thermal annealed RF sputtered silicon oxide films;Thin Solid Films;1999-04
3. Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrations;Journal of Applied Physics;1998-05
4. Breaking the silicon limit using semi-insulating Resurf layers;Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)
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