Characterization of InxGa1−xAs/GaAs strained layer superlattices by ion backscattering-channeling and X-ray diffraction-Reference-Cited by-同舟云学术

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Characterization of InxGa1−xAs/GaAs strained layer superlattices by ion backscattering-channeling and X-ray diffraction

Published:1988-05-16 Issue:1 Volume:107 Page:K19-K24
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Flagmeyer R.,Lenkeit K.,Baumbach T.,Kanter Yu. O.,Fedorov A. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Combined use of ion backscattering and x-ray rocking curves in the analyses of superlattices

2. Axial channeling studies of strained-layer superlattices

3. et al., to be published.

4. Phase-Locked Epitaxy Using RHEED Intensity Oscillation

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative depth-dependent structural and strain analysis in superlattices by ion channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-05

2. Molecular Epitaxy of A3B5 Compounds;Growth of Crystals;1992

3. Characterization of InGaAs/InP Single Quantum Well Structures by Rutherford Backscattering Spectrometry;Physica Status Solidi (a);1991-03-16

4. RBS studies of superlattices;Superlattices and Microstructures;1991-01

5. The thermal expansion coefficient of AIIIBV multilayer structure;physica status solidi (a);1990-03-16

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