On the influence of donor–acceptor interaction upon recombination and electrical instability in semi-insulating GaAs(Cr)-Reference-Cited by-同舟云学术

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On the influence of donor–acceptor interaction upon recombination and electrical instability in semi-insulating GaAs(Cr)

Published:1973-05-16 Issue:1 Volume:17 Page:155-162
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Vorobeva N. V.,Vorobev Yu. V.,Tretyak O. V.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Two‐Carrier Photothermoelectric Effects in GaAs

2. , , and , Proc. Conf. Plasma Physics and Electrical Instabilities in Solids, USSR, Vilnius 1971.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Slow domains in semi-insulating GaAs;Journal of Applied Physics;2001-07

2. A New Switching Effect in Semi-Insulating GaAs and Its Use for Deep Level Spectroscopy;Japanese Journal of Applied Physics;1986-11-20

3. Characterization of highly compensated semi-insulated GaAs substrates;Acta Physica Academiae Scientiarum Hungaricae;1980-04

4. Photoelectronic investigations of semi-insulating p-type GaAs:Cr containing neutral chromium acceptors;Journal of Physics and Chemistry of Solids;1977-01

5. Recombination mechanisms and parameters of deep centres in compensated GaAs;Physica Status Solidi (a);1975-05-16

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