Pulse Ion Beam Doping and Modification of Solids-Reference-Cited by-同舟云学术

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Pulse Ion Beam Doping and Modification of Solids

Published:1989-04-16 Issue:2 Volume:112 Page:757-760
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Piekoszewski J.,Werner Z.,Pochrybniak C.,Langner J.,Gryziński M.,Horodenski A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Pulsed ion beam irradiation of silicon

2. , , and , Proc. Conf. Energy Pulse Modification of Semicond., and Related Mater., Ed. K. Hennig, ZfK-555, 1985.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deposition and optimization of thin lead layers for superconducting accelerator photocathodes;Physica Scripta;2014-05-01

2. High intensity pulsed ion beams in the surface modification of solids—experiments carried out in Poland;Surface and Coatings Technology;1991-05

3. High intensity pulsed ion beams in material processing: Equipment and applications;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-02

4. Evaluation of Pulse Shape of Ion Beams Produced by the lonotron-Type Ion Sources;Physica Status Solidi (a);1989-04-16

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