High-temperature point defects in CdS:Cu-Reference-Cited by-同舟云学术

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High-temperature point defects in CdS:Cu

Published:1981-02-16 Issue:2 Volume:63 Page:389-399
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Kukk P. L.,Aarna H. A.,Voogne M. P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. The Chemistry of Imperfect Crystals, North-Holland Publ. Co., Amsterdam 1964.

2. , and , Papers of the Tallinn Technical University No. 404, Tallinn 1976 (p. 9).

3. and , in: Proc. IV. All-Union Conf. Physics, Chemistry, and Technical Application of AIIBVI Compounds, Odessa 1976 (p. 3).

4. , , and , see [3] (p. 3).

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photostimulated transformation of defects in cadmium iodide with copper and coactivators;Materials Science and Engineering: B;2000-02

2. Radiative and nonradiative recombination centers in Cl and Na doped CdTe monograin powders;Journal of Materials Science;2000

3. High temperature electrical conductivity in the Cu solubility limit range in ZnS:Cu;Journal of Crystal Growth;1999-02

4. Self- and impurity diffusion processes in widegap II–VI materials;Widegap II–VI Compounds for Opto-electronic Applications;1992

5. The nature of recombination centres in silver- and chlorine-doped CdS phosphors;Journal of Physics and Chemistry of Solids;1990-01

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