On the Formation of Extended Stacking Faults with Extrinsic Character in Deformed Indium Phosphide-Reference-Cited by-同舟云学术

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On the Formation of Extended Stacking Faults with Extrinsic Character in Deformed Indium Phosphide

Published:1993-06-16 Issue:2 Volume:137 Page:401-410
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Azzaz M.,Michel J. P.,Jacques A.,George A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. On the mobility of partial dislocations in silicon

2. Equilibre statique entre dislocations partielles dans du silicium déformé sous contrainte uniaxiale

3. Thesis, Université de Poitiers, 1987.

4. Anisotropic deformation behaviour of GaAs

5. Slip and twinning in high-stress-deformed GaAs and the influence of doping

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasticity of InSb at Low Temperature: Analysis of Microstructures by Transmission Electron Microscopy;physica status solidi (a);1998-05

2. Investigation of the Plasticity of InP as a Function of Temperature;Journal de Physique III;1995-11

3. Plastic deformation, extended stacking faults and deformation twinning in single crystalline indium phosphide 1. Undoped InP;Philosophical Magazine A;1994-05-01

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