Positron annihilation in point defects of the glassy As-Se system-Reference-Cited by-同舟云学术

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Positron annihilation in point defects of the glassy As-Se system

Published:1978-08-16 Issue:2 Volume:48 Page:K169-K173
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Alekseeva O. K.,Mikhailov V. I.,Shantarovich V. P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. The study of defects in crystals by positron annihilation

2. and , Electronic Processes in Non-Crystalline Substances, Mir, Moscow 1974 (p. 372, 385) (in Russian).

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale mechanism of rare-earth doping in Ga-codoped glassy As-Sb selenides;Journal of the American Ceramic Society;2017-05-05

2. Effect of Rare-Earth Doping on Free-Volume Nanostructure of Ga-Codoped Glassy (As/Sb)2Se3;Nanoscale Research Letters;2017-03-14

3. Free-Volume Nanostructurization in Ga-Modified As2Se3 Glass;Nanoscale Research Letters;2016-01-13

4. Effect of rare-earth doping on the free-volume structure of Ga-modified Te20As30Se50glass;RSC Advances;2016

5. Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-11

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