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X-Ray Topographic Contrast of Threading Dislocations in Silicon on Insulator Structures

  • Published:1996-11-16 Issue:1 Volume:158 Page:19-34
  • ISSN:0031-8965
  • Container-title:Physica Status Solidi (a)
  • language:en
  • Short-container-title:Phys. Stat. Sol. (a)

Author:

Prieur E.,Ohler M.,Härtwig J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical study of the properties of X-ray diffraction moiré fringes. I;Acta Crystallographica Section A Foundations and Advances;2015-05-14

2. Formation of X-ray shift fringes and a new method for determination of the difference sign of interplanar distances;Acta Crystallographica Section A Foundations of Crystallography;2004-10-26

3. X-ray Diffraction Topography at a Synchrotron Radiation Source Applied to the Study of Bonded Silicon on Insulator Material;Crystal Research and Technology;2002-07

4. Theory of moiré fringes on X-ray diffraction topographs of bicrystals;Acta Crystallographica Section A Foundations of Crystallography;1999-05-01

5. X-ray diffraction moiré topography as a means to reconstruct relative displacement fields in weakly deformed bicrystals;Acta Crystallographica Section A Foundations of Crystallography;1999-05-01
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