Modification of the theory of threshold voltage shift of MOS transistors by ion implantation-Reference-Cited by-同舟云学术

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Modification of the theory of threshold voltage shift of MOS transistors by ion implantation

Published:1975-07-16 Issue:1 Volume:30 Page:147-153
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Runge H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Internat. Conf. Properties and Use of MIS Structures, Grenoble 1971.

2. THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATION

3. MOS threshold shifting by ion implantation

4. and , Projected Range Statistics in Semiconductors (distributed by Stanford University Bookstore, 1969).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependence of capacitance-voltage characteristics in implanted MOS structures;physica status solidi (a);1982-04-16

2. Energy spectra of shallow traps in SiSiO2 structures implanted with boron ions at various implantation energies;Physica Status Solidi (a);1980-05-16

3. Implantation damage in silicon devices;Journal of Physics D: Applied Physics;1977-03-11

4. Properties of MOS structures after B+ ion bombardment;Physica Status Solidi (a);1976-11-16

5. The influence of deep levels on the temperature coefficient of ion-implanted resistive layers in silicon;Applied Physics;1976-06

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