A study of the nature of dislocation loops in growth striations in silicon by X-Ray double crystal topography-Reference-Cited by-同舟云学术

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A study of the nature of dislocation loops in growth striations in silicon by X-Ray double crystal topography

Published:1986-06-16 Issue:2 Volume:95 Page:579-588
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Gabrielyan K. T.,Kuběna J.,Holý V.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. and , in: Defects in Semiconductors, Ed. and , North-Holland Publ. Co., New York/Oxford 1981 (p. 55).

2. , and , see [1] (p. 31).

3. Interpretation of C-V measurements for determining the doping profile in semiconductors

4. Circular and Hexagonal Stacking Faults in Bulk Silicon Crystals

5. Precipitation of oxygen in silicon

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dedication;Dynamical Theory of X-Ray Diffraction;2003-11-06

2. Useful formulae;Dynamical Theory of X-Ray Diffraction;2003-11-06

3. Dedication;Dynamical Theory of X-Ray Diffraction;2003-11-06

4. Preface;Dynamical Theory of X-Ray Diffraction;2003-11-06

5. Copyright Page;Dynamical Theory of X-Ray Diffraction;2003-11-06

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