Temperature-dependent conversion electron Mössbauer measurements of57Fe implanted in silicon and germanium-Reference-Cited by-同舟云学术

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Temperature-dependent conversion electron Mössbauer measurements of57Fe implanted in silicon and germanium

Published:1979-12-16 Issue:2 Volume:56 Page:451-456
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Sawicka B. D.,Sawicki J. A.,Stanek J.,Tyliszczak T.,Kowalski J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. The electronic structure of impurities and other point defects in semiconductors

2. Mössbauer study of heat treated57Fe implanted silicon

3. Evidence of the electric quadrupole coupling of 57Fe implanted in silicon

4. Comparability of57Fe mössbauer data in ion-implanted and amorphous FeGe

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1. Charge states and distribution of iron ions in polycrystalline cubic boron nitride;Optical Materials;2003-07

2. Mössbauer study of iron impurities in cubic boron nitride;Journal of Alloys and Compounds;2003-03

3. Effect of grain boundaries on iron distribution in polycrystalline cubic boron nitride;Journal of Physics: Condensed Matter;2002-11-22

4. Applications of conversion electron Mössbauer spectrometry (CEMS);Journal of Radioanalytical and Nuclear Chemistry Articles;1996-01

5. CEMS study of silicon implanted iron;Hyperfine Interactions;1995-12

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