Annealing characteristics and lattice site location of 40 keV Sn implantations in GaAs

Author:

Finstad T. G.,Andersen S. L.,Olsen T.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. See, for example, references in: Defects in Crystalline Solids, Vol. 8: Ion Implantation, Ed. , , and , North-Holland Publ. Co., Amsterdam 1973.

2. , and , Development of Ion Implantation Techniques for Microelectronics, Summary Report, Contract No. NAS12-124, Hughes Research Laboratories, October 1969.

3. , , , , and , Proc. Internat. Summer School on Physics of Ionized Gases, Ed. Herzegnovi, Youguslavia, July 6–16, 1970.

4. , , , , and , Proc. Third Intantation Conf. Ion Impl. Ed. et al., Plenum Press, New York 1973.

5. Effects of Implantation Temperature on Lattice Location of Tellurium Implanted in Gallium Arsenide

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Annealing effect for heavily Sn‐implanted GaAs;Journal of Applied Physics;1987-05

2. Impurity and Defect Levels (Experimental) in Gallium Arsenide;Advances in Electronics and Electron Physics Volume 61;1983

3. Mossbauer study of Sn impurity defect structures in GaAs;Journal of Physics C: Solid State Physics;1980-02-29

4. Étude de la ségrégation de surface d'impuretés alcalines implantées dans l'arséniure de gallium;Journal de Physique;1978

5. Optical characterization of deep O implants in GaAs;Journal of Applied Physics;1977-04

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