Deformation-Induced Defects and Their Thermal Stability in Silicon-Reference-Cited by-同舟云学术

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Deformation-Induced Defects and Their Thermal Stability in Silicon

Published:1993-06-16 Issue:2 Volume:137 Page:611-617
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Yonenaga I.,Sumino K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Dislocation processes during plastic deformation of Si and Ge in the range 0.50 to 0.95 of the melting temperature

2. Plastische Verformung von Siliziumeinkristallen unterschiedlicher Ausgangsversetzungsdichte im Streckgrenzenbereich

3. , and , Inst. Phys. Conf. Ser. No. 67, 33 (1983).

4. The annealing of the EPR-signal produced in silicon by plastic deformation

5. Defect states associated with dislocations in silicon

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1. A novel constitutive model for semiconductors: The case of silicon;Journal of the Mechanics and Physics of Solids;2013-12

2. Dynamics and characters of dislocations in ZnSe;Journal of Materials Science;2006-04-17

3. Photoluminescence of Deformed Si-Ge Alloy;Materials Science Forum;1995-11

4. A Positron Lifetime Study of Defects in Plastically Deformed Silicon;Materials Science Forum;1995-11

5. Positron Annihilations Associated with Defects in Plastically Deformed Si;Japanese Journal of Applied Physics;1995-09-15

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