Computer simulation experiment on the mm-wave properties of indium phosphide double drift impatts-Reference-Cited by-同舟云学术

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Computer simulation experiment on the mm-wave properties of indium phosphide double drift impatts

Published:1988-09-16 Issue:1 Volume:109 Page:359-364
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Banerjee J. P.,Pati S. P.,Roy S. K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. , and , Proc. 4th Conf. NASECODE, Dublin 1985, Boole Press (p. 494).

2. , , and , Proc. 1st Conf. NASECODE Dublin 1979, Boole Press (p. 267).

3. Computer analysis of DC field and current-density profiles of DAR impatt diode

4. A small-signal theory of avalanche noise in IMPATT diodes

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photosensitive InP IMPATTs in the THz Regime: Modulation of Frequency-Chirping by Optical Means;Advanced Science Letters;2016-02-01

2. Effects of tunnelling current on millimetre-wave IMPATT devices;International Journal of Electronics;2014-11-19

3. THz Performance of Nano Dimension Si, GaAs and InP ATT Devices;Advanced Science Letters;2014-07-01

4. Millimeter wave properties of photo-illuminated Double Drift indium phosphide IMPATTs at elevated temperature;2008 International Conference on Microwave and Millimeter Wave Technology;2008-04

5. Photo-Illuminated InP Terahertz IMPATT Device;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05

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