Hall data analysis and effective hole mass of p-ZnSiP2-Reference-Cited by-同舟云学术

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Hall data analysis and effective hole mass of p-ZnSiP2

Published:1974-07-16 Issue:1 Volume:24 Page:K79-K83
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Ziegler E.,Siegel W.,Heinrich A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Proc. Internat. Conf. Phys. and Chem. Semicond., Heterojunctions and Layer Structures, Vol. 5, Budapest 1970 (p. 339).

2. Semi-insulating ZnSip2

3. Some electrical properties of p-ZnSiAs2

4. Some Electrical Properties of ZnGeP2Crystals

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deformation Potentials in AIIBIVC2V Ternary Chalcopyrite Semiconductors;physica status solidi (b);1993-07-01

2. On the Nature of Energy Levels in ZnGeP2;physica status solidi (a);1985-05-16

3. Band structure calculation of ZnSiP2;physica status solidi (b);1976-10-01

4. Conducting and semi-insulating n- and p-type ZnSiP2 single crystals;Physica Status Solidi (a);1976-06-16

5. Electron and hole mobility in ZnSiP2;Physica Status Solidi (a);1976-05-16

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