Pseudomorphic growth and nucleation of misfit dislocations in the epitaxial system (001) InP/In1-xGaxAs. II. Critical thickness and dislocation motion-Reference-Cited by-同舟云学术

Pseudomorphic growth and nucleation of misfit dislocations in the epitaxial system (001) InP/In1-xGaxAs. II. Critical thickness and dislocation motion

Published:1989-05-16 Issue:1 Volume:113 Page:71-81
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Wagner G.,Gottschalch V.,Rhan H.,Paufler P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Crystal Interfaces. Part I. Semi‐Infinite Crystals

2. in: Single Crystal Films, Ed. and , Pergamon Press, Oxford 1964 (p 139).

3. On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal Substrates

4. Misfit Accommodation by Imperfect Dislocations in Epitaxial fcc Films

5. in: Epitaxy–Endotaxy, Ed. Deutscher Verlag für Grundstoffindustrie, Leipzig 1969 (p. 145).

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