Growth conditions and morphological pecularities of gallium phosphide whiskers obtained by thermal evaporation in vacuum

Author:

Barabtarlo P. O.,Maksimov Yu. I.,Radautsan S. I.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid Mechanism

2. Morphology of gallium phosphide crystals grown by VLS mechanism with gallium as liquid-forming agent

3. , , and , Fosfid galliya, RIO Akad. Nauk Moldavian SSR, Kishinev 1970.

4. , Slozhnie poluprovodniki i ikh fizicheskie svoistva, RIO Akad. Nauk Moldaviam SSR, Kishinev 1971.

5. , , and , Fizika poluprovodnikov i mikroelektronika, Univ. Voronezh 1969 (p. 165).

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2. Independent Control of Nucleation and Layer Growth in Nanowires;ACS Nano;2020-02-12

3. Growth of Whiskers from the Vapor Phase;Highly Anisotropic Crystals;1987

4. Growth of Gallium Phosphide Whiskers;Рост Кристаллоь / Rost Kristallov / Growth of Crystals;1984

5. Morphology of triangular GaP whiskers;Journal of Crystal Growth;1976-10

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