Stress effect in sputtered metal–semiconductor junctions-Reference-Cited by-同舟云学术

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Stress effect in sputtered metal–semiconductor junctions

Published:1973-12-16 Issue:2 Volume:20 Page:589-594
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Groth Ö.,Hök B.,Tove P. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Effect of Mechanical Stress on p‐n Junction Device Characteristics

2. Effect of Mechanical Stress on p—n Junction Device Characteristics. II. Generation—Recombination Current

3. Effect of generation-recombination centers on the stress-dependence of Si p-n junction characteristics

4. Structural and operational characteristics of piezo-transistors and allied devices

5. Effect of Surface Polishing on the Stress-Sensitivity of a Schottky-Barrier Diode

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stress effect in Au‐Si Schottky diode doped with Cu;Journal of Applied Physics;1984-06-15

2. Schottky Diodes;Semiconducting Devices;1976

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