Relation between the activation energies (ε1,E1) and the temperature of carrier mobility maximum in semiconductors. A new method for determination ofE1-Reference-Cited by-同舟云学术

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Relation between the activation energies (ε1,E1) and the temperature of carrier mobility maximum in semiconductors. A new method for determination ofE1

Published:1976-06-16 Issue:2 Volume:35 Page:659-666
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Somogyi K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Electrical Properties of Germanium Semiconductors at Low Temperatures

2. Variation of Electrical Properties with Zn Concentration in GaP

3. See, e.g., Semiconductor Statistics, Pergamon Press, London/Oxford 1962.

4. Electrical properties of ZnGeP2 at relatively low temperatures

5. Hall Measurements of Te‐Doped Gallium Phosphide of Improved Homogeneity

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors;Semiconductors;2016-03

2. Interpretation of electrical and galvanomagnetic properties of diamond monocrystals;Applied Physics Letters;1999-09-27

3. On the electrical properties of GaP single crystals;Acta Physica Academiae Scientiarum Hungaricae;1978-01

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