Post-Annealing Effects on Doping Efficiency in Ne-Sputtered a-Si-Reference-Cited by-同舟云学术

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Post-Annealing Effects on Doping Efficiency in Ne-Sputtered a-Si

Published:1986-02-16 Issue:2 Volume:93 Page:669-674
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Abo-Namous S. A.,Fane R. W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Dependence of the Electronic and Optical Properties of Unhydrogenated a-Si on Preparation Conditions

2. Photoconductive properties of unhydrogenated Ne-sputtered a-Si

3. P-type unhydrogenated amorphous silicon produced by Ne sputtering

4. Highly doped sputtered amorphous silicon without hydrogen

5. and , Thin Film Technology, Vol. 3, McGraw-Hill Publ. Co., New York 1970.

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