Low-Temperature EBIC Study of Zn-Diffused GaAs p-n Junctions-Reference-Cited by-同舟云学术

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Low-Temperature EBIC Study of Zn-Diffused GaAs p-n Junctions

Published:1992-02-16 Issue:2 Volume:129 Page:555-567
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Araújo D.,Pavesi L.,Ky Nguyen Hong,Ganière J.-D.,Reinhart F. K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures

2. A model for the Zn diffusion in GaAs by a photoluminescence study

3. Theory of life time measurements with the scanning electron microscope: Steady state

4. Electron Mobility in High‐Purity GaAs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of post‐diffusion annealing on Zn‐diffused GaAs:Si;Journal of Applied Physics;1993-11

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