On the Theory of the MIS High-Frequency Capacitance. The Effect of Degeneration and Non-Parabolicity-Reference-Cited by-同舟云学术

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On the Theory of the MIS High-Frequency Capacitance. The Effect of Degeneration and Non-Parabolicity

Published:1982-11-16 Issue:1 Volume:74 Page:297-306
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Bazovkin V. M.,Kurushev G. L.,Polovinkin V. G.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Fiz. poluprovodnikovykh priborov, Izd. Energiya, Moscow 1973.

2. and , in: Svoistva struktur metall–dielektrik–poluprovodnik, Izd. Nauka, Moscow 1976.

3. An improved high‐frequency MOS capacitance formula

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1. MIS photodiode with an InAs-based tunnel-transparent oxide layer;Optoelectronics, Instrumentation and Data Processing;2014-01

2. Gauss-Quadrature rule in narrow band MIS structures modeling;2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices;2009-07

3. Solid-state analogue of the relativistic gases;Physical Review B;1986-06-15

4. A novel self-consistent theory of the electronic structure of inversion layers in InSb MIS structures;physica status solidi (b);1986-04-01

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