A model of nonequilibrium charge-carrier recombination in semiconductors containing nonuniformities-Reference-Cited by-同舟云学术

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A model of nonequilibrium charge-carrier recombination in semiconductors containing nonuniformities

Published:1984-11-16 Issue:1 Volume:86 Page:309-312
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Lugakov P. F.,Shusha V. V.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. , and , Peculiarities of Radiation Damage of Semiconductors by High-Energy Particles, Atomizdat, Moscow 1971.

2. Statistics of charge carrier recombination at radiation defect clusters in silicon

3. Electron-Hole Recombination in Germanium

4. Statistics of the Recombinations of Holes and Electrons

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The role of dislocations during charge-carrier recombination at radiation defects in p-Si;Physica Status Solidi (a);1989-06-16

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