Phase-contrast microscopy in comparison with other light-microscopic methods for direct observation of dislocation lines in single crystals-Reference-Cited by-同舟云学术

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Phase-contrast microscopy in comparison with other light-microscopic methods for direct observation of dislocation lines in single crystals

Published:1985-08-16 Issue:2 Volume:90 Page:573-579
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Löschke K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference60 articles.

1. Thesis A, Karl-Marx-Universität, Leipzig 1975.

2. Diploma Work, Karl-Marx-Universität, Leipzig 1973.

3. Diploma Work, Karl-Marx-Universität, Leipzig 1974.

4. Diploma Work, Karl-Marx-Universitat, Leipzig 1975.

5. Copper Precipitation on Dislocations in Silicon

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1. Stress birefringence and microinclusions in sublimation-grown bulk CdTe;Journal of Crystal Growth;1995-01

2. Variation of free charge carrier concentration in doped GaAs studied by phase microscopy;Materials Science and Engineering: B;1994-12

3. Direct observation of defects in transparent crystals by optical microscopy;Journal of Crystal Growth;1990-01

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