Thermal donors and carbonoxygen defects in silicon-Reference-Cited by-同舟云学术

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Thermal donors and carbonoxygen defects in silicon

Published:1987-02-16 Issue:2 Volume:99 Page:581-591
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Lindström J. L.,Weman H.,Oehrlein G. S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Mechanism of the Formation of Donor States in Heat-Treated Silicon

2. and , in: Defects in Semiconductors, Ed. and , Elsevier Publ. Co., New York 1983 (p. 107).

3. Electrical and infrared spectroscopic investigations of oxygen-related donors in silicon

4. and , see [2] (p. 171).

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1. The Interstitial Carbon–Dioxygen Center in Irradiated Silicon;Crystals;2020-11-05

2. IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon;Journal of Materials Science: Materials in Electronics;2017-04-07

3. Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin;Journal of Applied Physics;2015-07-07

4. Thermal double donor annihilation and oxygen precipitation at around 650 °C in Czochralski-grown Si: local vibrational mode studies;Journal of Physics: Condensed Matter;2005-05-20

5. Isovalent Impurities;Computational Microelectronics;2004

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