Structural Incorporation and Electrical Efficiency of Tl in PbTe

Author:

Gille P.,Schenk M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Doping of PbTe with Group-III elements: An ionic lattice approach

2. , , and , in: Legirovanniepoluprovodniki, Nauka, Moscow 1975 (p. 27).

3. Electrical effects of thallium on the Hall mobility in p-PbTe thin films

4. Thesis A, in preparation.

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. The site and pseudodonor character of manganese in single-crystal lead telluride;Journal of Physics: Condensed Matter;1990-12-31

2. Incorporation of Tl in monocrystalline n-PbS;physica status solidi (a);1986-06-16

3. Kondo-type behaviour of conductivity in Ti-doped PbTe single crystals;physica status solidi (b);1986-01-01

4. Lattice-parameter variations in PbTe single crystals;Crystal Research and Technology;1985-04

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