[100] Silicon doped with arsenic II. The connection of electrical and structural parameters with microplasmas-Reference-Cited by-同舟云学术

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[100] Silicon doped with arsenic II. The connection of electrical and structural parameters with microplasmas

Published:1976-11-16 Issue:1 Volume:38 Page:45-50
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Magden I. N.,Safonov V. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Effect of Dislocations on Breakdown in Silicon p‐n Junctions

2. Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect Junctions

3. VIMI Report No. 10 (1974).

4. Small Particles in Silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Energy Levels in Silicon;Annual Review of Materials Science;1980-08

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