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On the donor activity of oxygen in silicon at temperatures from 500 to 800 °C

  • Published:1981-03-16 Issue:1 Volume:64 Page:151-158
  • ISSN:0031-8965
  • Container-title:Physica Status Solidi (a)
  • language:de
  • Short-container-title:Phys. Stat. Sol. (a)

Author:

Schmalz K.,Gaworzewski P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 36 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tin-based donors in SiSn alloys;Journal of Applied Physics;2019-07-21

2. Oxygen Impurity in Crystalline Silicon;Handbook of Photovoltaic Silicon;2019

3. Oxygen Impurity in Crystalline Silicon;Handbook of Photovoltaic Silicon;2019

4. Oxygen Precipitation in Silicon;Defects and Impurities in Silicon Materials;2015

5. Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity;Semiconductor Physics Quantum Electronics and Optoelectronics;2012-09-25
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