Spin-lattice relaxation at high temperatures in heavily doped n-type silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Spin-lattice relaxation of conduction electrons in silicon
2. ESR in heavily doped n-type silicon near a metal-nonmetal transition
3. Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. II
4. Metal-Semiconductor Transition in Heavily Doped n–Type Silicon
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2. Impurity-Driven Two-Dimensional Spin Relaxation Induced by Intervalley Spin-Flip Scattering in Silicon;Physical Review Applied;2017-01-06
3. Donor-Driven Spin Relaxation in Multivalley Semiconductors;Physical Review Letters;2014-10-13
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