5 to 100 MeV Ion Implantation and Its Simulation by The MARLOWE Program-Reference-Cited by-同舟云学术

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5 to 100 MeV Ion Implantation and Its Simulation by The MARLOWE Program

Published:1991-01-16 Issue:1 Volume:123 Page:109-118
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Fahrner W. R.,Oppermann K. G.,Harms T.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. MARLOWE-Binary Collision Cascade Simulation Program, Version 12, July 1st, 1984.

2. , , and , in: Semiconductor Processing, ASTM STP 850, Ed. 1984 (p. 77).

3. and , Proc. MRS Conf., May 31 to June 2, Strasbourg 1988 (p. 75).

4. and , Range Distribution for Energetic Ions in all Elements, Vol. 6, Ed. Pergamon Press, New York 1980.

5. A Monte Carlo computer program for the transport of energetic ions in amorphous targets

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1. Modeling high-energy heavy-ion damage in silicon;IEEE Transactions on Nuclear Science;2001-12

2. Chapter 9 An overview of radiation-matter interactions;New Insulators, Devices and Radiation Effects;1999

3. Defect production in silicon irradiated with 5.68 GeV Xe ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-02

4. Effects of high-energy ion implantation into metals;Russian Physics Journal;1994-05

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