Evaluation of chromium concentration in semi-insulating GaAs: Cr from optical absorption-Reference-Cited by-同舟云学术

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Evaluation of chromium concentration in semi-insulating GaAs: Cr from optical absorption

Published:1984-07-16 Issue:1 Volume:84 Page:243-250
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Ulrici W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Backdating in GaAs MESFET's

2. Role of substrate in electrical properties of GaAs implanted layers

3. Measurement of the chromium concentration in semi‐insulating GaAs using optical absorption

4. Optical absorption on localized levels in gallium arsenide

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical absorption coefficient of semiconductors in the extrinsic region obtained by photoconductivity measurements: application to SI GaAs;Semiconductor Science and Technology;1990-08-01

2. Charged dislocation induced optical absorption in GaAs;Journal of Applied Physics;1989-02

3. EL2 in photoconductivity spectra of Cr-doped SI GaAs bulk crystals;Journal of Physics D: Applied Physics;1987-11-14

4. Transient photoconductivity measurements in semi‐insulating GaAs. I. An analog approach;Journal of Applied Physics;1987-09-15

5. Double source optical absorption and spectral photoconductivity measurements in the extrinsic region of semiconductors;Czechoslovak Journal of Physics;1987-08

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