Investigation of Current Characteristics of Thin-Film Structures Based on GaP under the Action of an Electron Beam-Reference-Cited by-同舟云学术

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Investigation of Current Characteristics of Thin-Film Structures Based on GaP under the Action of an Electron Beam

Published:1982-01-16 Issue:1 Volume:69 Page:K113-K116
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Rubinov V. M.,Tuychiev M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. , and , Symp. Fizicheskie yavleniya v poluprovodnikovykh strukturakh s glubokimi urovnyami i optoelektronika, Izd. Fan, Tashkent 1977 (p. 63).

2. , , and , Izv. Akad. Nauk Uzbek SSR, Ser. fiz.-mat. No. 3, 43 (1981).

3. , , , and , Tezisy Vesosoyuznoy Konf. Fizika soedinenii AIIIBV Novosibirsk 1981 (p. 318).

4. Electron Bombardment Induced Conductivity in Selenium

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons;Physica Status Solidi (a);1984-10-16

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