Field effect measurement on silicon and germanium with high frequency current
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Eigenschaften gewöhnlicher Halbleiteroberflächen
2. Hysteresis in the Large-Signal Field Effect in Semiconductor Surfaces
3. Some Measurements of the Surface Properties of Silicon by d.c., a.c. and Pulsed Field Effects
4. The effects of dried O2 on the surface conductance of silicon
5. Großsignal-Feldeffekt zur Oberflächentermbestimmung bei Silizium
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the possibility of studying solid-gas interfaces by capacitance measurements;Journal of Physics E: Scientific Instruments;1987-08
2. Determination of surface properties by means of large signal photovoltage pulses and the influence of trapping;Surface Science;1974-08
3. Magnetodiode transients;Solid-State Electronics;1973-12
4. Extension of the surface recombination model and unique determination of the recombination energy by means of reverse current measurements;Physica Status Solidi (a);1971-03-16
5. Determination of the ratio of capture cross sections of surface states by means of field effect measurements in stationary non-equilibrium on germanium;Physica Status Solidi (a);1971-03-16
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